Electromechanical properties of Nd-doped Bi4Ti3O12 films:: A candidate for lead-free thin-film piezoelectrics

被引：161

作者：

Maiwa, H

Iizawa, N

Togawa, D

Hayashi, T

Sakamoto, W

Yamada, M

Hirano, S

机构：

[1] Shonan Inst Technol, Dept Mat Sci & Engn, Kanagawa 2518511, Japan

[2] Nagoya Univ, Ctr Integrated Res Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Grad Sch Engn, Dept Appl Chem, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期

关键词：

D O I：

10.1063/1.1560864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-mum-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 degreesC exhibited a remanent polarization of 26 muC/cm(2). Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4x10(-4) under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics. (C) 2003 American Institute of Physics.

引用

页码：1760 / 1762

页数：3

共 16 条

[1] Spatial variation of ferroelectric properties in Pb(Zr0.3, Ti0.7)O3 thin films studied by atomic force microscopy [J].