Platinum-assisted phase transition in bismuth-based layer-structured ferroelectric CaBi4Ti4O15 thin films

被引:28
作者
Kato, K
Suzuki, K
Fu, DS
Nishizawa, K
Miki, T
机构
[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan
[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan
关键词
D O I
10.1063/1.1517179
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phase transition of nonferroelectric pyrochlore to ferroelectric perovskite in CaBi4Ti4O15 thin films depends on platinum bottom electrodes. Rather than the strain and crystallinity of the bottom electrode, matching of the atomic arrangement to the Ca-Bi-Ti-O thin films is predominant. CaBi4Ti4O15 thin films crystallized on (200)-oriented platinum at 650 degreesC showed c-axis orientation. In contrast, thin films crystallized on highly crystalline (111)-oriented platinum at the same temperature contained pyrochlore grains which were about several tens of nanometers in diameter and located in the interface region. They showed P-V hysteresis loops. The remanent polarization and coercive electric field depended on platinum top electrode size. (C) 2002 American Institute of Physics.
引用
收藏
页码:3227 / 3229
页数:3
相关论文
共 14 条
[1]   Formation of SrBi2Ta2O9 .1. Synthesis and characterization of a novel ''sol-gel'' solution for production of ferroelectric SrBi2Ta2O9 thin films [J].
Boyle, TJ ;
Buchheit, CD ;
Rodriguez, MA ;
AlShareef, HN ;
Hernandez, BA ;
Scott, B ;
Ziller, JW .
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (09) :2274-2281
[2]   Control of epitaxial growth for SrBi2Ta2O9 thin films [J].
Cho, JH ;
Bang, SH ;
Son, JY ;
Jia, QX .
APPLIED PHYSICS LETTERS, 1998, 72 (06) :665-667
[3]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[4]   Low-temperature preparation and characterization of SrBi2Ta2O9 thin films on (100)-oriented LaNiO3 electrodes [J].
Hu, GD ;
Wilson, IH ;
Xu, JB ;
Li, CP ;
Wong, SP .
APPLIED PHYSICS LETTERS, 2000, 76 (13) :1758-1760
[5]   Nonferroelectric epitaxial Sr-Bi-Ta oxide thin film with a high dielectric constant [J].
Hyun, SJ ;
Park, BH ;
Bu, SD ;
Jung, JH ;
Noh, TW .
APPLIED PHYSICS LETTERS, 1998, 73 (17) :2518-2520
[6]   Factors controlling the a-axis orientation of strontium bismuth tantalate thin films fabricated by chemical solution deposition [J].
Iijima, R .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2240-2242
[7]   Comparison of microstructure and ferroelectric properties of alkoxy-derived MBi4Ti4O15 (M: Ca or Sr) thin films [J].
Kato, K ;
Suzuki, K ;
Nishizawa, K ;
Miki, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B) :5580-5584
[8]   Ferroelectric properties of alkoxy-derived CaBi4Ti4O15 thin films on Pt-passivated Si [J].
Kato, K ;
Suzuki, K ;
Nishizawa, K ;
Miki, T .
APPLIED PHYSICS LETTERS, 2001, 78 (08) :1119-1121
[9]   Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties [J].
Kim, SH ;
Kim, DJ ;
Maria, JP ;
Kingon, AI ;
Streiffer, SK ;
Im, J ;
Auciello, O ;
Krauss, AR .
APPLIED PHYSICS LETTERS, 2000, 76 (04) :496-498
[10]   Effects of tantalum adhesion layer on the properties of SrBi2Ta2O9 ferroelectric thin films [J].
Leu, CC ;
Yang, MC ;
Hu, CT ;
Chien, CH ;
Yang, MJ ;
Huang, TY .
APPLIED PHYSICS LETTERS, 2001, 79 (23) :3833-3835