Electrodeposition of Se on Ti - Impedance and photoelectrochemical study of passivation phenomena

被引：4

作者：

Cattarin, S ^{[1
]}

Musiani, M ^{[1
]}

机构：

[1] CNR, Ist Polarog & Elettrochim Preparat, I-35127 Padua, Italy

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1997年 / 437卷 / 1-2期

关键词：

cathodic deposition; thin film; photoconductivity; high field conduction;

D O I：

10.1016/S0022-0728(97)00067-3

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The passivation phenomena observed during electrodeposition of Se on Ti substrates have been investigated. A high overpotential for hydrogen evolution appears essential to observation of passive and transpassive domains. Impedance analysis suggests that passivation results from the formation of a thin, highly resistive film, detected under all conditions of current density, temperature, illumination and concentration of sodium n-dodecyl sulphate. Electron transport in this film presumably occurs by a high field conduction mechanism. The deposits show photoconductive properties typical of amorphous Se. (C) 1997 Elsevier Science S.A.

引用

页码：85 / 92

页数：8

共 19 条

[11] HARTKE JL, 1965, PHYS REV, V139, P970
[12] EFFECTS OF ANNEALING ON GAP STATES IN AMORPHOUS SI FILMS
HASEGAWA, S
YAZAKI, S
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1978, 26 (07) : 407 - 410
[13] KAZACOS MS, 1980, J ELECTROCHEM SOC, V127, P869
[14] LEWERENZ HJ, 1995, PHOTOVOLTAIK GRUNDLA, P207
[15] FIELD-CONTROLLED PHOTOGENERATION AND FREE-CARRIER TRANSPORT IN AMORPHOUS SELENIUM FILMS
TABAK, MD
WARTER, PJ
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 899 - &
[16] Tauc J., 1972, Optical properties of solids, P277
[17] VIJH AK, 1973, ELECTROCHEMISTRY MET, P169
[18] THE ELECTROPLATING OF METALLIC SELENIUM
VONHIPPEL, A
BLOOM, MC
[J]. JOURNAL OF CHEMICAL PHYSICS, 1950, 18 (09) : 1243 - 1251
[19] ZHDANOV SI, 1975, ENCY ELECTROCHEMISTR, V4, P361

← 1 2 →