Leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface with dead layer -: art. no. 024106

被引:43
作者
Chen, B
Yang, H
Miao, J
Zhao, L
Cao, LX
Xu, B
Qiu, XG
Zhao, BR
机构
[1] Chinese Acad Sci, Inst Phys, Natl Lab Superconduct, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.1828219
中图分类号
O59 [应用物理学];
学科分类号
摘要
Leakage current of Pt/(Ba0.7Sr0.3)TiO3 (BST)/YBa2Cu3O7-delta capacitors on a (001) SrTiO3 substrate was studied. By modeling a low-dielectric constant layer, a so-called dead layer, between the Pt/BST interface as a parasitic capacitor in series with the bulk layer capacitor, the leakage current of Pt/BST interface was well analyzed based on the modified Schottky emission equation. Furthermore, a two-step schematic energy band diagram is proposed to explain the carrier transport through the Pt/BST interface. (C) 2005 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 16 条
[1]   Thickness dependence of leakage current behavior in epitaxial (Ba,Sr)TiO3 film capacitors [J].
Ahn, KH ;
Kim, SS ;
Baik, S .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) :1725-1730
[2]   Hydrogen induced tunnel emission in Pt/(BaxSr1-x)Ti1+yO3+z/Pt thin film capacitors [J].
Baniecki, JD ;
Laibowitz, RB ;
Shaw, TM ;
Parks, C ;
Lian, J ;
Xu, H ;
Ma, QY .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2873-2885
[3]   Electrical conduction mechanism in high-dielectric-constant (Ba0.5,Sr0.5)TiO3 thin films [J].
Chang, ST ;
Lee, JM .
APPLIED PHYSICS LETTERS, 2002, 80 (04) :655-657
[4]   Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor [J].
Chen, B ;
Yang, H ;
Zhao, L ;
Miao, J ;
Xu, B ;
Qiu, XG ;
Zhao, BR ;
Qi, XY ;
Duan, XF .
APPLIED PHYSICS LETTERS, 2004, 84 (04) :583-585
[5]   Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories [J].
Dietz, GW ;
Schumacher, M ;
Waser, R ;
Streiffer, SK ;
Basceri, C ;
Kingon, AI .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2359-2364
[6]   Positive temperature coefficient of resistivity in paraelectric (Ba,Sr)TiO3 thin films [J].
Jeong, DS ;
Ahn, KH ;
Park, WY ;
Hwang, CS .
APPLIED PHYSICS LETTERS, 2004, 84 (01) :94-96
[7]   Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films [J].
Lee, BT ;
Hwang, CS .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :124-126
[8]   Leakage current measurements of STO and BST thin films interpreted by the "dead" layer model [J].
Schmitz, S ;
Schroeder, H .
INTEGRATED FERROELECTRICS, 2002, 46 :233-242
[9]   Thickness dependence of leakage currents in high-permittivity thin films [J].
Schroeder, H ;
Schmitz, S .
APPLIED PHYSICS LETTERS, 2003, 83 (21) :4381-4383
[10]  
SCOTT JF, 2001, FERROELECTRIC MEMORI