Electron irradiation effect and photoluminescence properties of ZnO-tetrapod nanostructures

被引：25

作者：

Ahmad, Mashkoor ^{[1
]}

Pan, Caofeng ^{[1
]}

Zhao, Jiong ^{[1
]}

Iqbal, Javed

Zhu, Jing ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing Natl Ctr Electron Microscopy, China Iron & Steel Res Inst Grp,Lab Adv Mat, State Key Lab New Ceram & Fine Proc,Dept Mat Sci, Beijing 100084, Peoples R China

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 120卷 / 2-3期

关键词：

ZnO; Nanostructure; Defects; Tunneling; Electron irradiation; Photoluminescence;

D O I：

10.1016/j.matchemphys.2009.11.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of high-energy (200 key) electron irradiation on ZnO-tetrapod (ZnO-T) nanostructure has been investigated by employing in situ scanning tunneling microscopy (STM) holder inside TEM. The microscopic results have revealed that the product consists of highly single-crystalline ZnO-T structures. The photoluminescence spectra show the increased amount of defects which lead to shift in the emission peak position in ultraviolet (UV) region and enhance the PL performance in visible luminescence (VL) region of ZnO-T nanocrystals. The in situ measurements show asymmetric Schottky contacts at the both ends interfaces under electron irradiation. The current-voltage (I-V) characteristics have revealed that the increase in electron density (range of similar to 0-25 pA cm(-2)) leads to an increase in the current along with the increase in carrier concentration from 1.1 x 10(17) cm(-3) to 3.2 x 10(17) cm(-3). In addition, it has been interestingly found that at high bias voltage. Schottky contacts turn to Ohmic contacts at the both ends with the influence of irradiation-matter interaction. The results strongly suggest that the ZnO-T is considered as a promising candidate for applications in irradiation environments. (c) 2009 Elsevier B.V. All rights reserved.

引用

页码：319 / 322

页数：4

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