Localization of Dirac Electrons in Rotated Graphene Bilayers

被引：627

作者：

de laissardiere, G. Trambly ^{[1
]}

Mayou, D. ^{[2
]}

Magaud, L. ^{[2
]}

机构：

[1] Univ Cergy Pontoise, CNRS, Lab Phys Theor & Modelisat, F-95302 Cergy Pontoise, France

[2] Univ Grenoble 1, CNRS, Inst Neel, F-38402 Grenoble, France

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

关键词：

Graphene; graphite; Moire pattern; electron localization; ab initio; tight binding; FERMIONS; GAS; CONFINEMENT; GRAPHITE; ACCURATE;

D O I：

10.1021/nl902948m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

For Dirac electrons the Klein paradox implies that the confinement is difficult to achieve with an electrostatic potential although it can be of great importance for graphene-based devices. Here, ab initio and tight-binding approaches are combined and show that the wave function of Dirac electrons can be localized in rotated graphene bilayers due to the Moire pattern. This localization of wave function is maximum in the limit of the small rotation angle between the two layers.

引用

页码：804 / 808

页数：5

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