High-performing submicron organic thin-film transistors fabricated by residue-free embossing

被引：30

作者：

Auner, Christoph ^{[1
]}

Palfinger, Ursula ^{[1
]}

Gold, Herbert ^{[1
]}

Kraxner, Johanna ^{[1
]}

Haase, Anja ^{[1
]}

Haber, Thomas ^{[2
]}

Sezen, Meltem ^{[2
]}

Grogger, Werner ^{[2
]}

Jakopic, Georg ^{[1
]}

Krenn, Joachim R. ^{[1
]}

Leising, G. ^{[3
]}

Stadlober, Barbara ^{[1
]}

机构：

[1] Joanneum Res GmbH, Inst Nanostructured Mat & Photon, A-8160 Weiz, Austria

[2] Graz Univ Technol, Inst Electron Microscopy, A-8010 Graz, Austria

[3] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 04期

关键词：

Organic thin-film transistors; Nanoimprint lithography; Hot Embossing; Submicron channel length; FIELD-EFFECT TRANSISTORS; NM CHANNEL-LENGTH; ROLL-TO-ROLL; NANOIMPRINT LITHOGRAPHY; LOW-VOLTAGE;

D O I：

10.1016/j.orgel.2009.12.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, we report on an innovative residue-free nanoimprint lithography process for the patterning of submicron-spaced contacts, used as source and drain electrodes in down-scaled organic thin-film transistors. The method is based on thermally initiated radical polymerization of a novel imprint resist whose outstanding chemical and physical properties are responsible for the excellent results in processability and structure transfer. In combination with a pretreated stamp the thermally curable resist enables residue-free imprinting, thus making etching obsolete. In addition, this process implies only moderate temperature budgets and it is eco-friendly due to a water-based lift-off. To validate the process, source and drain patterned submicron organic thin-film transistors with pentacene as the semiconductor were fabricated, which show excellent transistor behavior parameterized by a low switch-on voltage of V-so = -3 V, an on-off ratio of more than 10(5) and a charge carrier mobility of mu = 0.25 cm(2)/V s. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：552 / 557

页数：6