Heteroepitaxy of SrTiO3 on vicinal Si(001):: Growth and kinetic effects

被引：22

作者：

Liang, Y ^{[1
]}

Wei, Y ^{[1
]}

Hu, XM ^{[1
]}

Yu, Z ^{[1
]}

Droopad, R ^{[1
]}

Li, H ^{[1
]}

Moore, K ^{[1
]}

机构：

[1] Motorola Labs, Microelect & Phys Sci Lab, Tempe, AZ 85284 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 06期

关键词：

D O I：

10.1063/1.1778214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxy of SrTiO3 on vicinal Si(001) substrates was accomplished using molecular beam epitaxy by codepositing Sr and Ti at a low-temperature-and-low-oxygen-pressure condition at the early stage of film growth. X-ray photoelectron spectroscopy and reflection-high-energy-electron diffraction showed that the SrTiO3 films grown by this method exhibited better chemical and structural behaviors than those produced by layer-by-layer deposition under similar conditions. Scanning tunneling microscopy revealed that a well-defined step-terrace morphology was retained on the SrTiO3 film grown by codeposition on a vicinal Si(001) substrate. These results suggest that kinetic effects play an important role and the presence of Sr promotes titanium oxidation by providing a different transition state with a lower Ti oxidation barrier. (C) 2004 American Institute of Physics.

引用

页码：3413 / 3416

页数：4

共 13 条

[1]

DROOPAD R, UNPUB J CRYST GROWTH

[2] Field effect transistors with SrTiO3 gate dielectric on Si [J].

Eisenbeiser, K ;

Finder, JM ;

Yu, Z ;

Ramdani, J ;

Curless, JA ;

Hallmark, JA ;

Droopad, R ;

Ooms, WJ ;

Salem, L ;

Bradshaw, S ;

Overgaard, CD .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1324-1326

[3]

HU X, 2002, APPL PHYS LETT, V82, P302

[4] Critical issues in the heteroepitaxial growth of alkaline-earth oxides on silicon [J].

Lettieri, J ;

Haeni, JH ;

Schlom, DG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (04) :1332-1340

[5] Two-dimensional growth of high-quality strontium titanate thin films on Si [J].

Li, H ;

Hu, X ;

Wei, Y ;

Yu, Z ;

Zhang, X ;

Droopad, R ;

Demkov, AA ;

Edwards, J ;

Moore, K ;

Ooms, W ;

Kulik, J ;

Fejes, P .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4521-4525

[6] Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide [J].

Matsumoto, Y ;

Murakami, M ;

Shono, T ;

Hasegawa, T ;

Fukumura, T ;

Kawasaki, M ;

Ahmet, P ;

Chikyow, T ;

Koshihara, S ;

Koinuma, H .

SCIENCE, 2001, 291 (5505) :854-856

[7] Crystalline oxides on silicon: The first five monolayers [J].

McKee, RA ;

Walker, FJ ;

Chisholm, MF .

PHYSICAL REVIEW LETTERS, 1998, 81 (14) :3014-3017

[8] EPITAXIAL-GROWTH OF SRTIO3 FILMS ON SI(100) SUBSTRATES USING A FOCUSED ELECTRON-BEAM EVAPORATION METHOD [J].

MORI, H ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (8A) :L1415-L1417

[9]

SAMSONOV GV, 1982, OXIDE HDB

[10] Structure and chemical reactivity of adsorbed carboxylic acids on anatase TiO2(001) [J].

Tanner, RE ;

Liang, Y ;

Altman, EI .

SURFACE SCIENCE, 2002, 506 (03) :251-271

← 1 2 →