Stability of Cu(In,Ga)Se2 solar cells and evaluation by C-V characteristics

被引：18

作者：

Kojima, T

Koyanagi, T

Nakamura, K

Yanagisawa, T

Takahisa, K

Nishitani, M

Wada, T

机构：

[1] Electrotech Lab, Device Funct Sect, Tsukuba, Ibaraki 305, Japan

[2] Matsushita Elect Ind Co Ltd, Cent Res Labs, Seika, Kyoto 61902, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

CIGS solar cell; stability; I-V characteristics; C-V characteristics; junction retrograde;

D O I：

10.1016/S0927-0248(97)00126-8

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To confirm the long-term reliability of Cu(In,Ga)Se(2) (CIGS) solar cells, we investigated the I-V and C-V characteristics during rests under irradiation or dark condition. Under irradiation, the test samples showed a little increase in efficiency (eta) and open-circuit voltage (T(oc)) which showed their electrical durability to light irradiation. But the diode factor (n) and series resistance (R(s)) showed large changes in value. Also, the built-in voltage (V(b)) and density gradient (dN(A)/d(X)) in the CIGS layer calculated from the C-V characteristics showed distinct changes during the test. After Lt SUN irradiation, two samples in the same fabrication-lot showed new light absorption in the lower-energy range than sun the energy gap of CIGS. We explain the change of C-V characteristics for the samples under strong irradiation with a new model named "Junction retrograde" which can treat defect generation by irradiation to reduce the acceptor density in graded pn junction. This model for C-V analysis can be used to investigate the long-term reliability of CIGS solar cells under irradiation.

引用

页码：87 / 95

页数：9

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