Epitaxial growth of CdTe(001) studied by scanning tunnelling microscopy

被引：18

作者：

Martrou, D ^{[1
]}

Eymery, J ^{[1
]}

Gentile, P ^{[1
]}

Magnea, N ^{[1
]}

机构：

[1] CEA, DRFMC, SP2M, F-38054 Grenoble, France

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

surfaces; vicinal surfaces; scanning tunnelling microscopy;

D O I：

10.1016/S0022-0248(98)80045-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Scanning tunnelling microscopy is used to study the growth mechanisms of CdTe(1 0 0) in molecular beam epitaxy. The 2D growth proceeds by the formation of square-shaped islands with (1 0 0) edges. This effect leads to the self-organisation of terraces for vicinal surfaces with (1 0 0) steps. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：203 / 207

页数：5

共 7 条

[1] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].