Estimation of chemical states and carrier density of Sn-doped In2O3 (ITO) by Mossbauer spectrometry

被引：15

作者：

Yamada, N

Shigesato, Y

Yasui, I

Li, H

Ujihira, Y

Nomura, K

机构：

[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan

[2] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 153, Japan

[3] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 113, Japan

来源：

HYPERFINE INTERACTIONS | 1998年 / 112卷 / 1-4期

关键词：

D O I：

10.1023/A:1011042223039

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

Chemical states of Sn in Sn-doped In2O3 (ITO) powders and films were studied by Mossbauer spectrometry. From the deconvolution analysis of the spectra it was found that there were 7- and 8-fold coordinated, electrically inactive Sn4+ species in the host lattice in addition to two electrically active Sn4+ species. The concentration of the electrically inactive dopants and the carrier densities could be estimated by Mossbauer spectra. The estimated carrier densities for the powders and films were in good agreement with the measured values.

引用

页码：213 / 216

页数：4

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