E-beam lithography and electrodeposition fabrication of thick nanostructured devices

被引：28

作者：

Lo, T. N. ^{[1
]}

Chen, Y. T.

Chiu, C. W.

Liu, C. J.

Wu, S. R.

Lin, I. K.

Su, C. I.

Chang, W. D.

Hwu, Y.

Shew, B. Y.

Chiang, C. C.

Je, J. H.

Margaritondo, G.

机构：

[1] Acad Sinica, Inst Phys, Taipei 115, Taiwan

[2] Tatung Univ, Dept Mat Engn, Taipei 104, Taiwan

[3] Natl Tsing Hua Univ, Dept Engn Sci & Syst, Hsinchu, Taiwan

[4] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 202, Taiwan

[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[6] Pohang Univ Sci & Technol, Xray Imaging Ctr, Pohang, South Korea

[7] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 10期

关键词：

D O I：

10.1088/0022-3727/40/10/021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanofabrication approach based on advanced e-beam lithography and electrodeposition successfully produced high-resolution (approximate to 40 nm line width) metal structures with high aspect ratio (>12) and high density. The combination of these characteristics is essential for hard-x-ray optical components such as zone plates, for x-ray lithography masks and for other devices.

引用

页码：3172 / 3176

页数：5

共 22 条

[1] Influence of sub-100 nm scattering on high-energy electron beam lithography [J].