In situ deposition of cadmium chloride films using MOCVD for CdTe solar cells

被引：30

作者：

Barrioz, V. ^{[1
]}

Irvine, S. J. C. ^{[1
]}

Jones, E. W. ^{[1
]}

Rowlands, R. L. ^{[1
]}

Lamb, D. A. ^{[1
]}

机构：

[1] Univ Wales, Sch Chem, Bangor LL57 2UW, Gwynedd, Wales

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

cadmium chloride; MOCVD; cadmium telluride; photovoltaic;

D O I：

10.1016/j.tsf.2006.12.043

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the first deposition of cadmium chloride (CdCl2) films by metal organic chemical vapour deposition (MOCVD). As the p-n junction can be deposited by MOCVD, the in situ CdCl, treatment of the device allows for containment of the whole process. MOCVD allows a high level of control over material properties and excellent repeatability. Deposition of CdCl2, on glass and silicon, at different II:VII precursor ratios and substrate temperatures are reported. The precursors used are dimethylcadmium and tertiarybutylchloride or n-hexylchloride, respectively for the cadmium and chlorine species. Results are presented on the surface morphology and layer structure. CdCl was in its hydrate form once exposed to ambient air. Preliminary results on the effects of in situ CdCl, treatment on MOCVD CdS/CdTe:As devices are reported and compared with untreated devices, using current-voltage characterisation. The CdCl, treatment successfully resulted in MOCVD devices having open-circuit voltage higher than 600 mV and fill factor above 50%. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：5808 / 5813

页数：6

共 15 条

[11] Influence of CdCl2 treatment on structural and optical properties of vacuum evaporated CdTe thin films [J].