High-speed germanium-on-SOI lateral PIN photodiodes

被引：137

作者：

Dehlinger, G ^{[1
]}

Koester, SJ

Schaub, JD

Chu, JO

Ouyang, QC

Grill, A

机构：

[1] Infineon Technol, A-9500 Villach, Austria

[2] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

Germanium (Ge); optoelectronic devices; photodetectors; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LPT.2004.835631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 x 10-mum detectors with finger spacing S of 0.4 mum (0.6 mum) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V The detectors with S = 0.6 mum had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 muA at -1-V bias.

引用

页码：2547 / 2549

页数：3

共 12 条

[1] Ge-on-Si approaches to the detection of near-infrared light
Colace, L
Masini, G
Assanto, G
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1999, 35 (12) : 1843 - 1852
[2] HETEROEXPITAXIAL GROWTH OF GE ON (100)SI BY ULTRAHIGH-VACUUM, CHEMICAL VAPOR-DEPOSITION
CUNNINGHAM, B
CHU, JO
AKBAR, S
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3574 - 3576
[3] DEHLINGER G, 2003, 1 INT SIGE TECHN DEV
[4] High performance germanium-on-silicon detectors for optical communications
Famà, S
Colace, L
Masini, G
Assanto, G
Luan, HC
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (04) : 586 - 588
[5] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys
Fischetti, MV
Laux, SE
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2234 - 2252
[6] Hecht E., 1974, OPTICS
[7] High-quality Ge epilayers on Si with low threading-dislocation densities
Luan, HC
Lim, DR
Lee, KK
Chen, KM
Sandland, JG
Wada, K
Kimerling, LC
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2909 - 2911
[8] High-speed interdigitated Ge PIN photodetectors
Oh, J
Csutak, S
Campbell, JC
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (03) : 369 - 371
[9] Palik ED, 1991, HDB OPTICAL CONSTANT
[10] High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
Samavedam, SB
Currie, MT
Langdo, TA
Fitzgerald, EA
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (15) : 2125 - 2127

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