High-speed germanium-on-SOI lateral PIN photodiodes

被引：137

作者：

Dehlinger, G ^{[1
]}

Koester, SJ

Schaub, JD

Chu, JO

Ouyang, QC

Grill, A

机构：

[1] Infineon Technol, A-9500 Villach, Austria

[2] IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

Germanium (Ge); optoelectronic devices; photodetectors; silicon-on-insulator (SOI) technology;

D O I：

10.1109/LPT.2004.835631

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and characterization of high-speed germanium on silicon-on-insulator lateral PIN photodetectors. At an incident wavelength of 850 nm, 10 x 10-mum detectors with finger spacing S of 0.4 mum (0.6 mum) produced a -3-dB bandwidth of 29 GHz (27 GHz) at a bias voltage of -1 V The detectors with S = 0.6 mum had external quantum efficiency of 34% at 850 nm and 46% at 900 nm and dark current of 0.02 muA at -1-V bias.

引用

页码：2547 / 2549

页数：3

共 12 条

[11] Resonant-cavity-enhanced high-speed Si photodiode grown by epitaxial lateral overgrowth
Schaub, JD
Li, R
Schow, CL
Campbell, JC
Neudeck, GW
Denton, J
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) : 1647 - 1649
[12] A high-speed, high-sensitivity silicon lateral trench photodetector
Yang, M
Rim, K
Rogers, DL
Schaub, JD
Welser, JJ
Kuchta, DM
Boyd, DC
Rodier, F
Rabidoux, PA
Marsh, JT
Ticknor, AD
Yang, QY
Upham, A
Ramac, SC
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (07) : 395 - 397

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