Growth characteristics of tungsten-carbon films deposited by magnetron sputtering

被引:5
作者
Harry, E
Pauleau, Y
Adamik, M
Barna, PB
Sulyok, A
Menyhard, M
机构
[1] CEA Grenoble, CEREM DEM SGM, F-38054 Grenoble 9, France
[2] Ecole Natl Super Electrochim & Electrome Grenoble, Inst Natl Polytech Grenoble, F-38402 St Martin Dheres, France
[3] Hungarian Acad Sci, Tech Phys Res Inst, H-1325 Budapest, Hungary
关键词
growth characteristics; magnetron sputtering; tungsten-carbon;
D O I
10.1016/S0257-8972(97)00635-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Tungsten and tungsten-carbon films have been deposited by direct and reactive magnetron sputtering in pure Ar and Ar-CH4 mixtures, respectively. The structural properties of W and W-C/substrate samples were investigated by cross-sectional transmission electron microscopy, concentrating on the structure of the interface regions. Both pure tungsten and tungsten-carbon films exhibit a regular columnar structure, but in the case of carbon-doped films, growth begins by the formation of a nanocrystalline alpha-W structure. At a certain film thickness, depending on the amount of the incorporated carbon, the growth of the films changes to the formation of a polycrystalline columnar structure. The carbon content is higher in the nanocrystalline part of the film, which is always present independently of the applied substrate material. (C) 1998 Published by Elsevier Science S.A.
引用
收藏
页码:291 / 294
页数:4
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