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Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications

被引：240
作者：
Avrutin, EA
Marsh, JH
Portnoi, EL
机构：
[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8QQ, Lanark, Scotland
[2] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
IEE PROCEEDINGS-OPTOELECTRONICS | 2000年 / 147卷 / 04期
关键词：
D O I：
10.1049/ip-opt:20000282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A systematic overview of experimental and theoretical results and methods reported for monolithic mode-locked laser diodes is presented. Both the properties of monolithic mode locked lasers required for microwave optoelectronic applications and their nature are discussed.
引用
收藏
页码：251 / 278
页数：28
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