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Electron spin relaxation dynamics in InGaAs/InP multiple-quantum wells

被引：10
作者：
Tackeuchi, A
Wada, O
机构：
[1] Waseda Univ, Dept Appl Phys, Shinjuku Ku, Tokyo 169, Japan
[2] Femtosecond Technol Res Assoc, FESTA Labs, Tsukuba, Ibaraki 300, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1998年 / 37卷 / 01期
关键词：
electron; spin relaxation; InGaAs; MQW; D'yakonov-Perel'; Elliott-Yafet;
D O I：
10.1143/JJAP.37.98
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electron spin relaxation of InGaAs/InP multiple-quantum wells is investigated at mom temperature using time-resolved polarization-dependent absorption measurements. The spin relaxation time is dependent on the quantum confined energy, E-1e, according to tau(s) proportional to E-1e(-1). The dependence differs from that of the D'yakonov-Perel' interaction, which governs the spin relaxation of GaAs quantum wells at room temperature, and suggests the possibility of the existence of an additional spin relaxation mechanism.
引用
收藏
页码：98 / 99
页数：2
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