Integrated temperature sensor in Er-doped silicon

被引：14

作者：

Kewell, AK ^{[1
]}

Reed, GT

Namavar, F

机构：

[1] Univ Surrey, Sch Elect Engn & Comp Studies, Guildford GU2 5XH, Surrey, England

[2] Spire Corp, Bedford, MA 01730 USA

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 65卷 / 2-3期

基金：

英国工程与自然科学研究理事会;

关键词：

temperature sensors; Er-doped silicon; luminescence; micromachining;

D O I：

10.1016/S0924-4247(97)01699-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes. (C) 1998 Elsevier Science S.A.

引用

页码：160 / 164

页数：5

共 25 条

[1] FLUORESCENT-BASED LIFETIME MEASUREMENT THERMOMETER FOR USE AT SUBROOM TEMPERATURES (200-300 K) [J].

ANGHEL, F ;

ILIESCU, C ;

GRATTAN, KTV ;

PALMER, AW ;

ZHANG, ZY .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1995, 66 (03) :2611-2614

[2] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS [J].

BIERSACK, JP ;

HAGGMARK, LG .

NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2) :257-269

[3] FABRICATION AND PACKAGING OF A RESONANT INFRARED-SENSOR INTEGRATED IN SILICON [J].

CABUZ, C ;

SHOJI, S ;

FUKATSU, K ;

CABUZ, E ;

MINAMI, K ;

ESASHI, M .

SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) :92-99

[4] A SILICON VLSI OPTICAL SENSOR FOR PATTERN-RECOGNITION [J].

CAMP, WO ;

VANDERSPIEGEL, J .

SENSORS AND ACTUATORS A-PHYSICAL, 1994, 43 (1-3) :188-195

[5] Erbium doping of Si via ion-beam-induced epitaxial crystallization: Another route to room-temperature photoluminescence [J].

Clerc, C ;

Bernas, H ;

Chaumont, J ;

Boucaud, P ;

Julien, F ;

Lourtioz, JM .

THIN SOLID FILMS, 1997, 294 (1-2) :223-226

[6] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI [J].

COFFA, S ;

FRANZO, G ;

PRIOLO, F ;

POLMAN, A ;

SERNA, R .

PHYSICAL REVIEW B, 1994, 49 (23) :16313-16320

[7] FREQUENCY-RESOLVED SPECTROSCOPY AND ITS APPLICATION TO THE ANALYSIS OF RECOMBINATION IN SEMICONDUCTORS [J].

DEPINNA, SP ;

DUNSTAN, DJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (05) :579-597

[8]

DETTMER R, 1997, IEEE REV MAR, P71

[9] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON [J].

ENNEN, H ;

SCHNEIDER, J ;

POMRENKE, G ;

AXMANN, A .

APPLIED PHYSICS LETTERS, 1983, 43 (10) :943-945

[10] A HIGHLY LINEAR SINGLE P-N-JUNCTION TEMPERATURE SENSOR [J].

FREIRE, RCS ;

DAHER, S ;

DEEP, GS .

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1994, 43 (02) :127-132

← 1 2 3 →