Reduction of carrier mobility in semiconductors caused by charge-charge interactions

被引：64

作者：

Hendry, E.

Koeberg, M.

Pijpers, J.

Bonn, M.

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.75.233202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the effect of charge-charge interactions on carrier mobility in titanium dioxide (TiO2) and silicon (Si) using terahertz spectroscopy. Charge scattering times and plasma frequencies are directly determined as a function of charge density. In Si, a linear increase in scattering rate for densities exceeding 10(21) m(-3) is attributed to electron-hole scattering. In contrast, in TiO2, charge-charge interactions are suppressed due to dielectric screening, highlighting the vastly different dielectric properties for these two materials.

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页数：4

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