Roughness scaling of plasma-etched silicon surfaces

被引：37

作者：

Brault, P

Dumas, P

Salvan, F

机构：

[1] Univ Orleans, CNRS, UMR 6606, Grp Rech Energet Milieux Ionsies, F-45067 Orleans 2, France

[2] Fac Sci Luminy, Grp Phys Etats Condenses, CNRS, UMR 6631, F-13288 Marseille, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1998年 / 10卷 / 01期

关键词：

D O I：

10.1088/0953-8984/10/1/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Atomic force microscopy reveals scaling behaviour of silicon surfaces etched by plasma. The experimental results are compared with some theoretical models. It is shown that plasma-induced roughness is driven by a phenomenon that can be described by shadowing instabilities resulting in columnar microstructure growth. The same scaling properties as are predicted by a growth model are obtained.

引用

页码：L27 / L32

页数：6

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