Tunable intersubband Raman laser in GaAs/AlGaAs multiple quantum wells

被引：35

作者：

Sun, G ^{[1
]}

Khurgin, JB

Friedman, L

Soref, RA

机构：

[1] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA

[2] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

[3] USAF, Rome Lab, Hanscom AFB, MA 01731 USA

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1998年 / 15卷 / 02期

关键词：

D O I：

10.1364/JOSAB.15.000648

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new tunable source of infrared radiation based on intersubband electron Raman scattering in semiconductor quantum wells is studied theoretically. The structure consisting of three levels in two coupled GaAs/AlGaAs quantum wells is optimized for a maximum Raman gain at zero bias. Raman gain as large as 400/cm can be achieved according to our calculations. Lasing wavelengths are tuned when an external de bias field is applied along the growth direction. An infrared tuning range of 8-12 mu m with moderate Raman gain is predicted as the electric field is varied from -40 to 40 kV/cm. (C) 1998 Optical Society of America.

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页码：648 / 651

页数：4

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