Spin transport and carrier-mediated magnetism in magnetic semiconductor heterostructures

被引:5
作者
Samarth, N [1 ]
机构
[1] Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USA
关键词
2DEG two-dimensional electron gas; IQHE integer quantum Hall effect; MR magnetoresistance; MS magnetic semiconductor; RKKY Ruderman-Kittel-Kasuya-Yosida;
D O I
10.1016/S1359-0286(98)80089-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The study of spin-dependent phenomena involving free carriers in magnetic semiconductor heterostructures has seen rapid advances over the past year, allowing fresh insights into spin transport, localization and carrier-mediated magnetism. These experiments have been enabled by the realization of extrinsically and intrinsically doped magnetic semiconductor heterostructures derived from the Il-VI and Ill-V semiconductors.
引用
收藏
页码:198 / 202
页数:5
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