Spin transport and carrier-mediated magnetism in magnetic semiconductor heterostructures

被引：5

作者：

Samarth, N ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, Davey Lab 104, University Pk, PA 16802 USA

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1998年 / 3卷 / 02期

关键词：

2DEG two-dimensional electron gas; IQHE integer quantum Hall effect; MR magnetoresistance; MS magnetic semiconductor; RKKY Ruderman-Kittel-Kasuya-Yosida;

D O I：

10.1016/S1359-0286(98)80089-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study of spin-dependent phenomena involving free carriers in magnetic semiconductor heterostructures has seen rapid advances over the past year, allowing fresh insights into spin transport, localization and carrier-mediated magnetism. These experiments have been enabled by the realization of extrinsically and intrinsically doped magnetic semiconductor heterostructures derived from the Il-VI and Ill-V semiconductors.

引用

页码：198 / 202

页数：5

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