Large-scale synthesis of gallium nitride nanosaws using a chemical vapor deposition method

被引:17
作者
Bae, SY
Seo, HW
Park, J
Yang, HN
机构
[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea
关键词
D O I
10.1016/S0009-2614(03)00671-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A large quantity of GaN nanostructures (nanosaws) was produced by a chemical vapor deposition of Ga/Ga2O3/ B2O3 mixture under NH3 flow. All of them have a single-edged sawlike, configuration. The average width of the nanosaw is in the range 100 nm-1 mum and the thickness is about 1/10 of the average width. They consist of single-crystalline wurtzite structure With the [0 1 1] direction parallel to the long axis and the [0 0 1] direction perpendicular to the edge of saw teeth. The jagged edges are in an angle of 100degrees-110degrees. The room-temperature cathodoluminescence exhibits a strong band-edge emission at 3.46 eV. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:620 / 625
页数:6
相关论文
共 27 条
[21]   Synthesis and Raman scattering of GaN nanorings, nanoribbons and nanowires [J].
Li, ZJ ;
Chen, XL ;
Li, HJ ;
Tu, QY ;
Yang, Z ;
Xu, YP ;
Hu, BQ .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (05) :629-632
[22]   Progress and prospects of group-III nitride semiconductors [J].
Mohammad, SN ;
Morkoc, H .
PROGRESS IN QUANTUM ELECTRONICS, 1996, 20 (5-6) :361-525
[23]   The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].
Nakamura, S .
SCIENCE, 1998, 281 (5379) :956-961
[24]   Growth of group III nitrides. A review of precursors and techniques [J].
Neumayer, DA ;
Ekerdt, JG .
CHEMISTRY OF MATERIALS, 1996, 8 (01) :9-25
[25]   NItride-based semiconductors for blue and green light-emitting devices [J].
Ponce, FA ;
Bour, DP .
NATURE, 1997, 386 (6623) :351-359
[26]   Strained gallium nitride nanowires [J].
Seo, HW ;
Bae, SY ;
Park, J ;
Yang, HN ;
Park, KS ;
Kim, S .
JOURNAL OF CHEMICAL PHYSICS, 2002, 116 (21) :9492-9499
[27]   Fabrication and photoluminescence of ordered GaN nanowire arrays [J].
Zhang, J ;
Zhang, LD ;
Wang, XF ;
Liang, CH ;
Peng, XS ;
Wang, YW .
JOURNAL OF CHEMICAL PHYSICS, 2001, 115 (13) :5714-5717