A silicon-on-insulator quantum wire

被引：49

作者：

Colinge, JP

Baie, X

Bayot, V

Grivei, E

机构：

[1] UNIV CATHOLIQUE LOUVAIN, DICE, MICROELECTR LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM

[2] UNIV CATHOLIQUE LOUVAIN, PCPM LAB, B-1348 LOUVAIN LA NEUVE, BELGIUM

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 01期

关键词：

D O I：

10.1016/0038-1101(95)00094-A

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin, narrow silicon-on-insulator n-channel MOSFETs have been fabricated. The drain current characteristics, when measured as a function of gate voltage at low temperature, exhibit a series of oscillations, which is characteristic of current transport in one-dimensional systems (quantum wires). Theoretical calculation of the current oscillations in the device show reasonable agreement with the experimental characteristics.

引用

页码：49 / 51

页数：3

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