The In-As-Sb phase diagram and LPE growth of InAsSb layers on InAs at extremely low temperatures

A calculation of the In-As-Sb phase diagram in the low-temperature range 300 400 degrees C has been made applying the rare simple solution model, By using the calculated data an extremely low temperature LPE was performed for growing InAs1-xSbx layers on InAs substrates at temperatures as low as 300 degrees C. It was shown that high-quality layers can be grown on InAs with x up to 0.26. SEM microprobe compositional analysis and X-ray diffraction analysis confirmed their homogeneity and high crystal quality and the promise of this material for mid-infrared optoelectronic devices. (C) 1998 Elsevier Science B.V. All rights reserved.