Effects of silicon and germanium adsorbed on graphene

被引：65

作者：

Akturk, E. ^{[1
]}

Ataca, C. ^{[1
,2
]}

Ciraci, S. ^{[1
,2
]}

机构：

[1] Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 12期

关键词：

ab initio calculations; adsorption; APW calculations; binding energy; density functional theory; electronic structure; elemental semiconductors; germanium; graphene; magnetic moments; silicon;

D O I：

10.1063/1.3368704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Based on the first-principles plane wave calculations, we studied the adsorption of Si and Ge on graphene. We found that these atoms are bound to graphene at the bridge site with a significant binding energy, while many other atoms are bound at the hollow site above the center of hexagon. It is remarkable that these adatoms may induce important changes in the electronic structure of graphene even at low coverage. Semimetallic graphene becomes metallized and attains a magnetic moment. The combination of adatom orbitals with those of pi- and pi(*)-states of bare graphene is found responsible for these effects.

引用

页数：3

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