Pinning of magnetic domain walls to structural defects in thin layers within a Heisenberg-type model

被引：21

作者：

Jourdan, Thomas ^{[1
]}

Lancon, Frederic ^{[1
]}

Marty, Alain ^{[1
]}

机构：

[1] CEA, Dept Rech Fondamentale Mat Condensee, SP2M, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.75.094422

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction between domain walls and structural defects in equiatomic L1(0) FePt, antiphase boundaries and microtwins, was investigated by numerical simulations at atomic scale based on a Heisenberg model. It was shown that domain walls are strongly pinned, with depinning fields reaching a few teslas for the thickest microtwins. The potential well of the domain wall pinned in the microtwin is found to be asymmetric as a result of the pinning process. This results in depinning fields depending on the direction of propagation of the wall.

引用

页数：5

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