Strain-induced birefringence in vertical-cavity semiconductor lasers

被引:35
作者
van Doorn, AKJ [1 ]
van Exter, MP [1 ]
Woerdman, JP [1 ]
机构
[1] Leiden Univ, Huygens Lab, NL-2300 RA Leiden, Netherlands
关键词
elastooptic effect; polarization; semiconductor laser; strain; vertical-cavity laser;
D O I
10.1109/3.663454
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe a new technique to study and control the polarization properties of planar vertical-cavity semiconductor lasers, The technique consists of the application of a controllable amount of strain by means of the thermal expansion that results from local heating in the vicinity of the device, Analytical expressions are derived for the strain and birefringence induced with this hot-spot technique, Experimentally, the relation between strain and birefringence is found to be highly anisotropic; this allows a natural interpretation of the distribution of the native polarization angles.
引用
收藏
页码:700 / 706
页数:7
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