Reactive solid-phase epitaxial growth of NaxCoO2 (x∼0.83) via lateral diffusion of Na into a cobalt oxide epitaxial layer

被引：63

作者：

Ohta, H ^{[1
]}

Kim, SW

Ohta, S

Koumoto, K

Hirano, M

Hosono, H

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] JST, ERATO, Hosono Transparent ElectroAct Mat, Kawasaki, Kanagawa 2130012, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

CRYSTAL GROWTH & DESIGN | 2005年 / 5卷 / 01期

关键词：

D O I：

10.1021/cg049818c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-quality epitaxial films of layered cobaltite Na(0.8)3CoO(2) were successfully grown on (0001)-oriented alpha-Al2O3 substrate by reactive solid-phase epitaxy using CoO epitaxial layer and NaHCO3 powder. First, the thermal oxidation of the CoO film into Co3O4 occurs at a lower temperature (300-500 degreesC), then a Na0.83CoO2 epitaxial layer formed via lateral diffusion of Na+ ions together with oxide ions into Co3O4 layers.

引用

页码：25 / 28

页数：4

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