Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor

被引：1658

作者：

Nomura, K

Ohta, H

Ueda, K

Kamiya, T

Hirano, M

Hosono, H

机构：

[1] Japan Sci & Technol, ERATO, Hosono Transparent ElectroAct Mat, Kawasaki, Kanagawa 2130012, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

SCIENCE | 2003年 / 300卷 / 5623期

关键词：

D O I：

10.1126/science.1083212

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)(5), as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of similar to10(6) and a field-effect mobility of similar to80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

引用

收藏

页码：1269 / 1272

页数：5

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