Trends in ferromagnetism, hole localization, and acceptor level depth for Mn substitution in GaN, GaP, GaAs, and GaSb

被引：68

作者：

Mahadevan, P ^{[1
]}

Zunger, A ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 14期

关键词：

D O I：

10.1063/1.1799245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We examine the intrinsic mechanism of ferromagnetism in dilute magnetic semiconductors by analyzing the trends in the electronic structure as the host is changed from GaN to GaSb, keeping the transition metal impurity fixed. In contrast with earlier interpretations which depended on the host semiconductor, it is found that a single mechanism is sufficient to explain the ferromagnetic stabilization energy for the entire series. (C) 2004 American Institute of Physics.

引用

页码：2860 / 2862

页数：3

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