Electron scattering near an itinerant to localized electronic transition

被引：38

作者：

Rivadulla, F ^{[1
]}

Zhou, JS ^{[1
]}

Goodenough, JB ^{[1
]}

机构：

[1] Univ Texas, Texas Mat Inst, ETC 9 102, Austin, TX 78712 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.67.165110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an unconventional temperature dependence of the resistivity in several strongly correlated systems approaching a localized to itinerant electronic transition from the itinerant electron side. The observed (rho-rho(0))proportional toT(3/2) behavior over the entire range of materials discussed cannot be explained within the framework of existing theories. We propose a model in which the scattering of the conduction electrons by locally cooperative bond-length fluctuations in a matrix of vibronic and Fermi-liquid electrons can account for the experimental data.

引用

页数：6

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