Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

被引：19

作者：

Buyanova, IA ^{[1
]}

Bergman, JP

Monemar, B

Amano, H

Akasaki, I

Wysmolek, A

Lomiak, P

Baranowski, JM

Pakula, K

Stepniewski, R

Korona, KP

Grzegory, I

Bockowski, M

Porowski, S

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

[3] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[4] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 105卷 / 08期

关键词：

semiconductors; thin films; optical properties; luminescence;

D O I：

10.1016/S0038-1098(97)10184-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Temperature dependent studies of the resonant and phonon-assisted radiative recombination of free excitons (FEs) in GaN are performed and are analyzed within the polariton concept. A strong impurity scattering of exciton-polaritons is proposed to be responsible for the revealed unusual behavior of the free A exciton in GaN, i.e. an enhanced intensity of the resonant FE emission in comparison with its longitudinal optical (LO) phonon replicas at low temperatures, as well as the narrow line shape of the 1-LO assisted transitions. (C) 1998 Elsevier Science Ltd.

引用

页码：497 / 501

页数：5

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