2D-numerical analysis and optimum design of thin film silicon solar cells

被引：16

作者：

Matsui, T ^{[1
]}

Yamazaki, T

Nagatani, A

Kino, K

Takakura, H

Hamakawa, Y

机构：

[1] Osaka Univ, Fac Engn Sci, Dept Elect Engn, Toyonaka, Osaka 5608531, Japan

[2] Ritsumeikan Univ, Fac Sci & Engn, Dept Photon, Shiga 5258577, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 65卷 / 1-4期

基金：

日本学术振兴会;

关键词：

device modeling; thin-film poly-Si solar cells; grain boundary;

D O I：

10.1016/S0927-0248(00)00081-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Device modeling for p-i-n junction muc-Si basis thin film polycrystalline Si solar cells has been examined with a simple model of columnar grain structure and its boundary condition utilizing two-dimensional device simulator. As the simulation results of solar cell characteristics show, open-circuit voltage (V-oc) and curve fill factor (FF) considerably depend on those structural parameters, while short-circuit current density (J(sc)) is comparatively stable by courtesy of homogeneous built-in electric field in the i layer. It has also been found that conversion efficiency over 12% could be expected with 1 mum grain size and well-passivated condition with 3 mum thick i-layer. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：87 / 93

页数：7