UV curing nanoimprint lithography for uniform layers and minimized residual layers

被引:44
作者
Lee, H [1 ]
Jung, GY
机构
[1] Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea
[2] Hewlett Packard Labs, QSR Grp, Palo Alto, CA USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 12期
关键词
UV curing nanoimprinting lithography; no residual layer; UV curing resin; self-assembled monolayer; pressurized chamber imprinting system; high fidelity pattern transfer;
D O I
10.1143/JJAP.43.8369
中图分类号
O59 [应用物理学];
学科分类号
摘要
Due to its ability to produce nanosized patterns on large area substrates with high throughput, UV curing nanoimprinting lithography is a promising technology for nanosized pattern fabrication. However, for it to become a technology for the mass production of nanosized patterns, we must first show that UV curing imprint lithography can produce a uniform layer with minimal residue. In this study, a pressurized chamber imprinting system was used. Isotropic pressure was applied to insure effective delivery of pressing force and uniform pressing. A UV curable resin, consisting of a perfluorinated acrylate and a photo-initiator, was used. The factors determining residual layer thickness in UV curing imprint lithography were investigated. To obtain imprinted patterns with no residual layer, a thin and uniform initial resin layer and pressurized imprinting must be used to rearrange the resin effectively. The high fidelity transfer of various patterns as small as 150 nm with no residual layer was successfully demonstrated by controlling the initial resin thickness at an imprint pressure of 15 atm.
引用
收藏
页码:8369 / 8373
页数:5
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