Resonant inversion of tunneling magnetoresistance

被引：140

作者：

Tsymbal, EY ^{[1
]}

Sokolov, A ^{[1
]}

Sabirianov, IF ^{[1
]}

Doudin, B ^{[1
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.90.186602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Resonant tunneling via localized states in the barrier can invert magnetoresistance in magnetic tunnel junctions. Experiments performed on electrodeposited Ni/NiO/Co nanojunctions of area smaller than 0.01 mum(2) show that both positive and negative values of magnetoresistance are possible. Calculations based on Landauer-Buttiker theory explain this behavior in terms of disorder-driven statistical variations in magnetoresistance with a finite probability of inversion due to resonant tunneling.

引用

页数：4

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