MOSFET dosimetry for microbeam radiation therapy at the European Synchrotron Radiation Facility

被引:95
作者
Bräuer-Krisch, E
Bravin, A
Lerch, M
Rosenfeld, A
Stepanek, J
Di Michiel, M
Laissue, JA
机构
[1] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[2] Univ Wollongong, Ctr Med Radiat Phys, Wollongong, NSW 2522, Australia
[3] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[4] Univ Bern, Inst Pathol, CH-3010 Bern, Switzerland
关键词
microdosimetry; microbeam radiation therapy; edge-on MOSFET; synchrotron radiation;
D O I
10.1118/1.1562169
中图分类号
R8 [特种医学]; R445 [影像诊断学];
学科分类号
1002 ; 100207 ; 1009 ;
摘要
Preclinical experiments are carried out with similar to20-30 mum wide, similar to10 mm high parallel microbeams of hard, broad- "white" -spectrum x rays (similar to50-600 keV) to investigate microbeam radiation therapy (MRT) of brain tumors in infants for whom other kinds of radiotherapy are inadequate and/or unsafe. Novel physical microdosimetry (implemented with MOSFET chips in the "edge-on" mode) and Monte Carlo computer-simulated dosimetry are described here for selected points in the peak and valley regions of a microbeam-irradiated tissue-equivalent phantom. Such microbeam irradiation causes minimal damage to normal tissues, possible because of rapid repair of their microscopic lesions. Radiation damage from an array of parallel microbeams tends to correlate with the range of peak-valley dose ratios (PVDR). This paper summarizes comparisons of our dosimetric MOSFET measurements with Monte Carlo calculations. Peak doses at depths <22 mm are 18% less than Monte Carlo values, whereas those depths >22 mm and valley doses at all depths investigated (2 mm-62 mm) are within 2-13 % of the Monte Carlo values. These results lend credence to the use of MOSFET detector systems in edge-on mode for microplanar irradiation dosimetry. (C) 2003 American Association of Physicists in Medicine.
引用
收藏
页码:583 / 589
页数:7
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