Growth and characterisation of GaAs/InGaAs/GaAs nanowhiskers on (111) GaAs

被引：39

作者：

Regolin, I.

Sudfeld, D.

Luettjohann, S.

Khorenko, V.

Prost, W.

Kaestner, J.

Dumpich, G.

Meier, C.

Lorke, A.

Tegude, F. -J

机构：

[1] Univ Duisburg Gesamthsch, Solid State Elect Dept, D-47048 Duisburg, Germany

[2] Univ Duisburg Gesamthsch, Dept Phys, D-47048 Duisburg, Germany

[3] Univ Duisburg Gesamthsch, Festkorperphys Lab, D-47048 Duisburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷

关键词：

high-resolution electron transmission microscopy; nanostructures; metalorganic vapor phase epitaxy; arsenates; gallium compounds; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2006.10.122

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs/InxGa1-xAs/GaAs hetero structures nanowires were grown by metal-organic vapor-phase epitaxy on (I I I)B GaAs substrate using the vapor-liquid-solid growth mode. The diameter of the nanowires was defined by monodisperse gold nanoparticles deposited on the GaAs substrate. High-resolution electron transmission microscopy investigation revealed the structural properties of the grown whiskers using bright field images. Using energy disperse X-ray spectroscopy measurements, the composition along and perpendicular to the vertical growth direction has been determined. In addition, the sharpness of the created heterojunctions was investigated. Finally, micro photoluminescence measurements on single GaAs/InGaAs/GaAs whiskers were carried out. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：607 / 611

页数：5

共 11 条

[1] One-dimensional steeplechase for electrons realized [J].