Growth of one-dimensional nanostructures in MOVPE

被引：267

作者：

Seifert, W ^{[1
]}

Borgström, M ^{[1
]}

Deppert, K ^{[1
]}

Dick, KA ^{[1
]}

Johansson, J ^{[1
]}

Larsson, MW ^{[1
]}

Mårtensson, T ^{[1
]}

Sköld, N ^{[1
]}

Svensson, CPT ^{[1
]}

Wacaser, BA ^{[1
]}

Wallenberg, LR ^{[1
]}

Samuelson, L ^{[1
]}

机构：

[1] Lund Univ, Dept Solid State Phys, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 272卷 / 1-4期

关键词：

nanostructures; metalorganic vapor phase epitaxy; semiconducting III-V material;

D O I：

10.1016/j.jcrysgro.2004.09.023

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated. Some kinetic effects are discussed, especially the general finding that in MOVPE thinner whiskers grow faster than thicker whiskers. Effects of growth temperature on growth rate and shape of the whiskers, the effects of different growth directions on the perfection of the materials and the possibilities to grow heterostructures in axial and lateral directions are reported. Ways to overcome the randomness in whisker growth by controlled seeding of the Au particles and by using lithography for site control are demonstrated. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：211 / 220

页数：10

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