A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD

被引：17

作者：

Zhang, XD ^{[1
]}

Zhao, Y ^{[1
]}

Zhu, F ^{[1
]}

Wei, CC ^{[1
]}

Wu, CY ^{[1
]}

机构：

[1] Nankai Univ, Inst Optoelect, Tianjin 300071, Peoples R China

来源：

ACTA PHYSICA SINICA | 2005年 / 54卷 / 01期

关键词：

very high frequency plasma enhanced chemical vapor deposition; microcrystalline silicon; Raman spectroscopy; optical emission spectroscopy;

D O I：

10.7498/aps.54.445

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Structural properties of microcrystalline silicon films deposited by very high frequency plasma-enhanced chemical. vapor deposition(VHF-PECVD) and on-line monitor were studied using Raman and optical emission spectroscopy. The results obtained showed that the discharge power has a modulation function on crystalline volume fraction (chi(c)) of materials. A larger silane concentration means a stronger modulation function. The intensity of SiH* peak can characterize the deposition rate in a certain range, however the higher power indicates the lower deposition rate, and the ratio of intensity Halpha(*) to SiH* peak value reflects the extent of crystallinity which is consistent with the result obtained from Raman measurement. In addition, the ratio of I ([Hbeta)*(]) / I ([Halpha)*(]) indicates the decrease of electronic temperature in hydrogen plasma with the increase of discharge power.

引用

页码：445 / 449

页数：5

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