Copper oxide reduction through vacuum annealing

被引：177

作者：

Lee, SY ^{[1
]}

Mettlach, N ^{[1
]}

Nguyen, N ^{[1
]}

Sun, YM ^{[1
]}

White, JM ^{[1
]}

机构：

[1] Univ Texas, Texas Mat Inst, Ctr Mat Chem, Austin, TX 78712 USA

来源：

APPLIED SURFACE SCIENCE | 2003年 / 206卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

copper; oxide; reduction; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0169-4332(02)01239-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The reduction of partially- and fully-oxidized Cu films was carried out by vacuum annealing, and the reduction mechanisms were investigated in situ by XPS. For a partially-oxidized Cu film, CuO was reduced to CU2O around 380 K, and the Cu2O concentration decreased with increasing annealing temperature and fell below the XPS detection limit at 673 K. For a fully-oxidized Cu film, CuO started to form Cu2O around 473 K, and Cu began to appear at 673 K. The results for a partially-oxidized film are interpreted in terms of oxygen diffusion into bulk Cu rather than oxygen desorption into vacuum. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：102 / 109

页数：8

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