Image formation in EUV lithography: Multilayer and resist properties

被引：19

作者：

Cerrina, F ^{[1
]}

Bollepalli, S ^{[1
]}

Khan, M ^{[1
]}

Solak, H ^{[1
]}

Li, W ^{[1
]}

He, D ^{[1
]}

机构：

[1] Univ Wisconsin, Madison, WI 53706 USA

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00260-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the results of a modeling study of the image formation process in EUVL. Using a rigorous diffraction scheme, we compute the propagation of the mask image in the multilayer stack. The same approach is used to compute the aberrations induced by the multilayer stack on converging beams. We show that in the first case the multilayer stack introduces a change in the mask image that affects the final image projected on the wafer and that in the second case the multilayers introduce a non-negligible amount of spherical aberration in the propagating beam.

引用

页码：13 / 20

页数：8