Charge carrier transport properties of poly (9,9-dioctylfluorene) thin films

被引：3

作者：

Ando, M

Murakami, S

Naito, H ^{[1
]}

机构：

[1] Univ Osaka Prefecture, Dept Phys & Elect, Sakai, Osaka 5998531, Japan

[2] Technol Res Inst Osaka Prefecture, Izumi, Osaka 5941157, Japan

来源：

SYNTHETIC METALS | 2003年 / 135卷 / 1-3期

关键词：

other conjugated and conducting polymers; amorphous thin films; transport measurements; photoconductivity;

D O I：

10.1016/S0379-6779(02)00917-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Charge carrier transport properties of hole-only devices based on poly(9,9-dioctylfluorene) (PFO) are investigated in terms of dark current-voltage (I-V) measurements. The built-in potential (V-bi) of the devices is determined by photovoltaic measurements. A power-law I-V relationship, I proportional to V-m (m>2), is found above the Ohmic region. Space-charge-limited current theory for exponential localized-state distributions can be applied to the interpretation of such behavior by taking account of Vbi.

引用

页码：285 / 286

页数：2

共 4 条

[1] High brightness and efficiency blue light-emitting polymer diodes [J].