Radical densities in fluorocarbon/O2 discharges -: interpretation based on a simple plasma chemistry model

被引:3
作者
Kim, MT [1 ]
机构
[1] Korea Elect Power Res Inst, Mat & Machinery Grp, Taejon 305380, South Korea
关键词
fluorocarbon/O-2; discharges; plasma chemistry model; radical densities;
D O I
10.1016/S0169-4332(03)00253-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In CF4 based discharges admixed with oxygen the density of CF2 radicals decreases with an increase in the oxygen flow at a fixed CF4 flow and pressure. This decrease is attributed to the increased reaction of CF2 radicals and O atoms in the bulk plasma and to the O-2 dilution effect. By taking into account these two factors the behavior of the densities of CF2 radicals, F and O atoms in CF4/O-2, discharges was theoretically investigated in terms of oxygen flow using a simple plasma chemistry model. The data provided by Buchmann et al. [J. Appl. Phys. 67 (1990) 3635] were interpreted based on the proposed model, and the validity of the model was discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:285 / 292
页数:8
相关论文
共 33 条
[1]   SILICON ETCHING IN A DIRECT-CURRENT GLOW-DISCHARGE OF CF4/O2 AND NF3/O2 [J].
BLOM, HO ;
BERG, S ;
NENDER, C ;
NORSTROM, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06) :1321-1324
[2]   Determination of chemically active species in a novel microwave plasma source by laser-induced fluorescence [J].
Brockhaus, A ;
Yuan, Y ;
Behle, S ;
Engemann, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03) :1882-1887
[3]   ANALYSIS OF A CF4/O2 PLASMA USING EMISSION, LASER-INDUCED FLUORESCENCE, MASS, AND LANGMUIR SPECTROSCOPY [J].
BUCHMANN, LM ;
HEINRICH, F ;
HOFFMANN, P ;
JANES, J .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (08) :3635-3640
[4]   FLOW-RATE EFFECTS IN PLASMA ETCHING [J].
CHAPMAN, BN ;
MINKIEWICZ, VJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :329-332
[5]   COMPUTER-SIMULATION OF A CF4 PLASMA-ETCHING SILICON [J].
EDELSON, D ;
FLAMM, DL .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (05) :1522-1531
[6]  
ENTEY WR, 2000, ELECTROCHEM SOLID ST, V3, P99
[7]   Surface kinetics of polyphenylene oxide etching in a CF4/O2/Ar downstream microwave plasma [J].
Hsu, KC ;
Koretsky, MD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) :1818-1824
[8]  
JANES JM, COMMUNICATION
[9]   Chemical dry etching of silicon nitride and silicon dioxide using CF4/O-2/N-2 gas mixtures [J].
Kastenmeier, BEE ;
Matsuo, PJ ;
Beulens, JJ ;
Oehrlein, GS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (05) :2802-2813
[10]   Deposition kinetics of silicon dioxide from hexamethyldisilazane and oxygen by PECVD [J].
Kim, MT .
THIN SOLID FILMS, 1999, 347 (1-2) :99-105