SILICON ETCHING IN A DIRECT-CURRENT GLOW-DISCHARGE OF CF4/O2 AND NF3/O2

被引：4

作者：

BLOM, HO

BERG, S

NENDER, C

NORSTROM, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1321 / 1324

页数：4

共 12 条

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