DC-ETCHING OF POLYSILICON WITH FLUORINE CHEMISTRY

被引：2

作者：

BLOM, HO ^{[1
]}

NENDER, C ^{[1
]}

BERG, S ^{[1
]}

NORSTROM, H ^{[1
]}

机构：

[1] ERICSSON COMPONENTS AB,S-16381 KISTA STOCKHOLM,SWEDEN

来源：

关键词：

D O I：

10.1016/0042-207X(88)90469-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：813 / 816

页数：4

共 10 条

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[3] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P109
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[7] CHEMICAL SPUTTERING YIELDS OF SILICON RESULTING FROM F+,CFN+(N=1,2,3)ION BOMBARDMENT
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[8] THE EFFECTS OF ARSENIC DOPING IN REACTIVE ION ETCHING OF SILICON IN CHLORINATED PLASMAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (09) : 1898 - 1905
[9] INFLUENCE OF DOPING ON THE ETCHING OF SI(111)
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[10] PLASMA-ASSISTED ETCHING MECHANISMS - THE IMPLICATIONS OF REACTION PROBABILITY AND HALOGEN COVERAGE
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