THE EFFECTS OF ARSENIC DOPING IN REACTIVE ION ETCHING OF SILICON IN CHLORINATED PLASMAS

被引：21

作者：

SCHWARTZ, GC

SCHAIBLE, PM

机构：

来源：

关键词：

D O I：

10.1149/1.2120120

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1898 / 1905

页数：8

共 11 条

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[2] KOIKE A, 1982, EL SOC EXT ABSTR, V82, P343
[3] ANISOTROPIC-PLASMA ETCHING OF POLYSILICON
MOGAB, CJ
LEVINSTEIN, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 721 - 730
[4] POGGE HB, 1978, J ELECTROCHEM SOC, V125, pC470
[5] REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES
SCHAIBLE, PM
METZGER, WC
ANDERSON, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 334 - 337
[6] REACTIVE ION ETCHING OF SILICON
SCHWARTZ, GC
SCHAIBLE, PM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 410 - 413
[7] SCHWARTZ GC, 1981, PLASMA PROCESSING, P133
[8] SCHWARTZ GC, 1979, EL SOC EXT ABSTR, V79, P1535
[9] ARSENIC CLUSTERING IN SILICON
SCHWENKER, RO
PAN, ES
LEVER, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3195 - +
[10] ELECTRICAL-PROPERTIES OF THERMALLY AND LASER ANNEALED POLYCRYSTALLINE SILICON FILMS HEAVILY DOPED WITH ARSENIC AND PHOSPHORUS
SOLMI, S
SEVERI, M
ANGELUCCI, R
BALDI, L
BILENCHI, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1811 - 1818