ELECTRICAL-PROPERTIES OF THERMALLY AND LASER ANNEALED POLYCRYSTALLINE SILICON FILMS HEAVILY DOPED WITH ARSENIC AND PHOSPHORUS

被引：40

作者：

SOLMI, S

SEVERI, M

ANGELUCCI, R

BALDI, L

BILENCHI, R

机构：

[1] SGS ATES,MILANO,ITALY

[2] CISE SPA,I-20100 MILANO,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124299

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1811 / 1818

页数：8

共 38 条

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[3]

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[4]

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[8]

FISTUL VI, 1969, HEAVILY DOPED SEMICO, P95

[9] CW LASER ANNEAL OF POLYCRYSTALLINE SILICON - CRYSTALLINE-STRUCTURE, ELECTRICAL-PROPERTIES [J].

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[10]

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