OXYGEN EFFECT ON THE ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON FILMS

被引：16

作者：

ANGELUCCI, R

DORI, L

SEVERI, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92717

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：346 / 348

页数：3

共 10 条

[1]

ARMIGLIATO A, 1980, 7TH P EUR C EL MICR, V3, P162

[2]

BLOEM J, 1978, CURRENT TOPICS MATER, V1, P308

[3] GROWTH OF POLYCRYSTALLINE SILICON FILMS - GRAIN-SIZE [J].

EMMANUEL, A ;

POLLOCK, HM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1586-1591

[4] DEFORMATION OCCURRING DURING DEPOSITION OF POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (05) :681-684

[5] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690

[6] PHOSPHORUS DOPING OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

MANDURAH, MM ;

SARASWAT, KC ;

KAMINS, TI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1019-1023

[7]

NOBILI D, COMMUNICATION

[8] CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY FOR POLYCRYSTALLINE SILICON FILMS [J].

OPPOLZER, H ;

FALCKENBERG, R ;

DOERING, E .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :97-103

[9] GRAIN-GROWTH MECHANISM OF HEAVILY PHOSPHORUS-IMPLANTED POLYCRYSTALLINE SILICON [J].

WADA, Y ;

NISHIMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1499-1504

[10]

YASUDA Y, 1972, SPR EL SOC M, P69

← 1 →